This work focuses on InGaP/AlGaInP epitaxy layers, which are widely adopted in red optoelectronic devices. Designs of active layers for VCSEL were fabricated via MOCVD in order to investigate the relationships between material properties and sample characteristics. Due to wide bandgap energy of the corresponding material, difficulties on absorption and small range of refractive index make the threshold conditions hard to achieve. Experiments differ in composition and thickness are studied.
In this paper, 5 samples of InGaP/AlGaInP MQW with different structures were prepared, which are labeled as “experiment A”, “experiment B”, “experiment C”, “experiment D” and “experiment E”, respectively. We treat “experiment A” as the standard setup, and then vary the amount of strain for comparison. Weakness and benefit based on photoluminescence measurements among those structures are concluded in the end.